Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption

TY - JOUR

T1 - Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption

AU - Sun, Leimeng

AU - Zhu, Minmin

AU - Zhao, Chun

AU - Song, Peiyi

AU - Wang, Yurong

AU - Xiao, Dongyang

AU - Liu, Huafeng

AU - Tsang, Siu Hon

AU - Teo, Edwin Hang Tong

AU - Hu, Fangjing

AU - Tu, Liangcheng

N1 - Funding Information: This work was partially supported by the National Key R&D Program of China (Grant No. 2018YFC0603301 ), the National Natural Science Foundation of China (Grant No. 61801185 ), and HUST Key Innovation Team Foundation for Interdisciplinary Promotion (Grant No. 2016JCTD102 ). We thank Kejia Wang and Yue Song at the Wuhan National Laboratory for Optoelectronics at HUST for their assistance in THz-TDS measurements. Funding Information: This work was partially supported by the National Key R&D Program of China (Grant No. 2018YFC0603301), the National Natural Science Foundation of China (Grant No. 61801185), and HUST Key Innovation Team Foundation for Interdisciplinary Promotion (Grant No. 2016JCTD102). We thank Kejia Wang and Yue Song at the Wuhan National Laboratory for Optoelectronics at HUST for their assistance in THz-TDS measurements. Publisher Copyright: © 2019 Elsevier Ltd

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Materials with high and broadband absorption characteristics in the terahertz (THz) range are desirable for many applications. In this paper, we propose, fabricate and experimentally demonstrated a wafer-scale vertically aligned carbon nanotube (VACNT) array for broadband THz wave absorption. The effects of VACNT parameters on the absorption performance are investigated within the THz and infrared spectra using the Maxwell-Garnett theory, revealing that the absorption in the THz range can be greatly enhanced by suitable selections of the length, volume fraction and vertical alignment factor of CNTs. A VACNT array with an average CNT length of ∼600 μm is fabricated on a 4-inch silicon substrate. Experimental results measured by a THz time-domain spectroscopic system show an average power absorptance of ∼98% from 0.3 to 2.5 THz, and agree well with the numerical modelling. This device can be used as a cost-effective near-perfect absorber across the THz and infrared regions for thermal emission and imaging, electromagnetic interference shielding, stealth and energy harvesting applications.

AB - Materials with high and broadband absorption characteristics in the terahertz (THz) range are desirable for many applications. In this paper, we propose, fabricate and experimentally demonstrated a wafer-scale vertically aligned carbon nanotube (VACNT) array for broadband THz wave absorption. The effects of VACNT parameters on the absorption performance are investigated within the THz and infrared spectra using the Maxwell-Garnett theory, revealing that the absorption in the THz range can be greatly enhanced by suitable selections of the length, volume fraction and vertical alignment factor of CNTs. A VACNT array with an average CNT length of ∼600 μm is fabricated on a 4-inch silicon substrate. Experimental results measured by a THz time-domain spectroscopic system show an average power absorptance of ∼98% from 0.3 to 2.5 THz, and agree well with the numerical modelling. This device can be used as a cost-effective near-perfect absorber across the THz and infrared regions for thermal emission and imaging, electromagnetic interference shielding, stealth and energy harvesting applications.

UR - http://www.scopus.com/inward/record.url?scp=85071028778&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2019.08.001

DO - 10.1016/j.carbon.2019.08.001

M3 - Article

AN - SCOPUS:85071028778

SN - 0008-6223

VL - 154

SP - 503

EP - 509

JO - CARBON

JF - CARBON

ER -