Why is it that differently doped regions in semiconductors are visible in low voltage SEM?

M El-Gomati, T Wells, I Mullerova, L Frank, H Jayakody

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	288-292
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	2
Publication status	Published - 2004

Cite this

@article{387ce5f987b842b0ad7e7695cfaac102,

title = "Why is it that differently doped regions in semiconductors are visible in low voltage SEM?",

author = "M El-Gomati and T Wells and I Mullerova and L Frank and H Jayakody",

year = "2004",

language = "Undefined/Unknown",

volume = "51",

pages = "288--292",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "2",

}