XPS and XMCD study of Fe3O4/GaAs interface

Y X Lu; J S Claydon; E Ahmad; Y B Xu; S M Thompson; Karen Wilson; G van der Laan

doi:10.1109/TMAG.2005.854834

XPS and XMCD study of Fe3O4/GaAs interface

Y X Lu, J S Claydon, E Ahmad, Y B Xu, S M Thompson, Karen Wilson, G van der Laan

Research output: Contribution to journal › Article › peer-review

Abstract

Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (NPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of nsulating Fe divalent oxide phases (FeO) beneath the surface Fe-3 O-4 layer with the sample thickness above 4 mn. This FeO might act as a barrier for the spin injection into the GaAs.

Original language	English
Pages (from-to)	2808-2810
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.854834
Publication status	Published - Oct 2005

Bibliographical note

© 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Keywords

half-metallic Fe3O4
post-growth oxidation
spintronics
XMCD
SPIN INJECTION
SEMICONDUCTOR
OXIDATION

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10.1109/TMAG.2005.854834

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http://dx.doi.org/10.1109/TMAG.2005.854834

Cite this

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title = "XPS and XMCD study of Fe3O4/GaAs interface",

abstract = "Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (NPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of nsulating Fe divalent oxide phases (FeO) beneath the surface Fe-3 O-4 layer with the sample thickness above 4 mn. This FeO might act as a barrier for the spin injection into the GaAs.",

keywords = "half-metallic Fe3O4, post-growth oxidation, spintronics, XMCD, SPIN INJECTION, SEMICONDUCTOR, OXIDATION",

author = "Lu, {Y X} and Claydon, {J S} and E Ahmad and Xu, {Y B} and Thompson, {S M} and Karen Wilson and {van der Laan}, G",

note = "{\textcopyright} 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.",

year = "2005",

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language = "English",

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T1 - XPS and XMCD study of Fe3O4/GaAs interface

AU - Lu, Y X

AU - Claydon, J S

AU - Ahmad, E

AU - Xu, Y B

AU - Thompson, S M

AU - Wilson, Karen

AU - van der Laan, G

N1 - © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 2005/10

Y1 - 2005/10

N2 - Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (NPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of nsulating Fe divalent oxide phases (FeO) beneath the surface Fe-3 O-4 layer with the sample thickness above 4 mn. This FeO might act as a barrier for the spin injection into the GaAs.

AB - Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (NPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of nsulating Fe divalent oxide phases (FeO) beneath the surface Fe-3 O-4 layer with the sample thickness above 4 mn. This FeO might act as a barrier for the spin injection into the GaAs.

KW - half-metallic Fe3O4

KW - post-growth oxidation

KW - spintronics

KW - XMCD

KW - SPIN INJECTION

KW - SEMICONDUCTOR

KW - OXIDATION

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DO - 10.1109/TMAG.2005.854834

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

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ER -