ZnSe-based laser diodes: New approaches

A. Gust; C. Kruse; M. Klude; E. Roventa; R. Kroger; K. Sebald; H. Lohmeyer; B. Brendemuhl; J. Gutowski; D. Hommel

doi:10.1002/pssc.200460673

ZnSe-based laser diodes: New approaches

A. Gust, C. Kruse, M. Klude, E. Roventa, R. Kroger, K. Sebald, H. Lohmeyer, B. Brendemuhl, J. Gutowski, D. Hommel

Physics

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

In this paper we report on recent results concerning conventional edge emitting laser structures containing either quantum wells or quantum dots as region and vertical-cavity surface-emitting lasers. In the first part a series of four similar laser structures containing quantum wells with an emission wavelength of 520 run was grown by molecular beam epitaxy in order to perform a systematic study of lifetime improvement. They differed in the alternating implementation of an additional 5 nm thick ZnSSe layer with a high sulfur composition of 25% neighboring the quantum well. A high stability of the CdZnSSe active layer was observed by introducing such a kind of strain compensating layers. Lifetime measurements showed a significant improvement up to one order of magnitude using p- and n- I p-side layers. In the second part electro-optical characteristics of ridge and planar CdSe quantum dot laser diodes were compared. A reduction of the threshold current density by a factor of 4.7 for the ridge structure was obtained. This has to be associated to the reduction of current spreading inside the laser diodes. Furthermore, a significant slower degradation of CdSe quantum dot structures compared to common ZnSe-based QW structures was observed. An operating time over 2700 h in pulsed mode experiments at 50 A/cm(2) in LED mode was achieved. In the third part we report on the realization of an optically pumped monolithic vertical-cavity surface-emitting laser operating at a wavelength of 511 nm. The microresonator has a quality factor of 3200 while the threshold excitation power density for the onset of lasing is 22 kW/cm(2) at room temperature. Micropillars of different diameter fabricated out of this structure show discrete optical modes due to the three dimensional optical confinement of the optical wave. (c) 2005 WILEY-VCH Verlag GmbH I Co. KGaA, Weinheim.

Original language	Undefined/Unknown
Title of host publication	E-MRS 2004 Fall Meeting Symposia C and F
Editors	M. Stutzmann
Pages	1098-1105
Number of pages	8
Volume	2
DOIs	https://doi.org/10.1002/pssc.200460673
Publication status	Published - 2005

Publication series

Name	Physica Status Solidi C-Current Topics in Solid State Physics

Bibliographical note

Times Cited: 14 Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting SEP 06-10, 2004 Warsaw, POLAND European Mat Res Soc

Access to Document

10.1002/pssc.200460673

Cite this

@inbook{1e059c2a6b85436b899a9f3a514dc6ff,

title = "ZnSe-based laser diodes: New approaches",

abstract = "In this paper we report on recent results concerning conventional edge emitting laser structures containing either quantum wells or quantum dots as region and vertical-cavity surface-emitting lasers. In the first part a series of four similar laser structures containing quantum wells with an emission wavelength of 520 run was grown by molecular beam epitaxy in order to perform a systematic study of lifetime improvement. They differed in the alternating implementation of an additional 5 nm thick ZnSSe layer with a high sulfur composition of 25% neighboring the quantum well. A high stability of the CdZnSSe active layer was observed by introducing such a kind of strain compensating layers. Lifetime measurements showed a significant improvement up to one order of magnitude using p- and n- I p-side layers. In the second part electro-optical characteristics of ridge and planar CdSe quantum dot laser diodes were compared. A reduction of the threshold current density by a factor of 4.7 for the ridge structure was obtained. This has to be associated to the reduction of current spreading inside the laser diodes. Furthermore, a significant slower degradation of CdSe quantum dot structures compared to common ZnSe-based QW structures was observed. An operating time over 2700 h in pulsed mode experiments at 50 A/cm(2) in LED mode was achieved. In the third part we report on the realization of an optically pumped monolithic vertical-cavity surface-emitting laser operating at a wavelength of 511 nm. The microresonator has a quality factor of 3200 while the threshold excitation power density for the onset of lasing is 22 kW/cm(2) at room temperature. Micropillars of different diameter fabricated out of this structure show discrete optical modes due to the three dimensional optical confinement of the optical wave. (c) 2005 WILEY-VCH Verlag GmbH I Co. KGaA, Weinheim.",

author = "A. Gust and C. Kruse and M. Klude and E. Roventa and R. Kroger and K. Sebald and H. Lohmeyer and B. Brendemuhl and J. Gutowski and D. Hommel",

note = "Times Cited: 14 Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting SEP 06-10, 2004 Warsaw, POLAND European Mat Res Soc",

year = "2005",

doi = "10.1002/pssc.200460673",

language = "Undefined/Unknown",

volume = "2",

series = "Physica Status Solidi C-Current Topics in Solid State Physics",

pages = "1098--1105",

editor = "M. Stutzmann",

booktitle = "E-MRS 2004 Fall Meeting Symposia C and F",

}

TY - CHAP

T1 - ZnSe-based laser diodes: New approaches

AU - Gust, A.

AU - Kruse, C.

AU - Klude, M.

AU - Roventa, E.

AU - Kroger, R.

AU - Sebald, K.

AU - Lohmeyer, H.

AU - Brendemuhl, B.

AU - Gutowski, J.

AU - Hommel, D.

N1 - Times Cited: 14 Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting SEP 06-10, 2004 Warsaw, POLAND European Mat Res Soc

PY - 2005

Y1 - 2005

N2 - In this paper we report on recent results concerning conventional edge emitting laser structures containing either quantum wells or quantum dots as region and vertical-cavity surface-emitting lasers. In the first part a series of four similar laser structures containing quantum wells with an emission wavelength of 520 run was grown by molecular beam epitaxy in order to perform a systematic study of lifetime improvement. They differed in the alternating implementation of an additional 5 nm thick ZnSSe layer with a high sulfur composition of 25% neighboring the quantum well. A high stability of the CdZnSSe active layer was observed by introducing such a kind of strain compensating layers. Lifetime measurements showed a significant improvement up to one order of magnitude using p- and n- I p-side layers. In the second part electro-optical characteristics of ridge and planar CdSe quantum dot laser diodes were compared. A reduction of the threshold current density by a factor of 4.7 for the ridge structure was obtained. This has to be associated to the reduction of current spreading inside the laser diodes. Furthermore, a significant slower degradation of CdSe quantum dot structures compared to common ZnSe-based QW structures was observed. An operating time over 2700 h in pulsed mode experiments at 50 A/cm(2) in LED mode was achieved. In the third part we report on the realization of an optically pumped monolithic vertical-cavity surface-emitting laser operating at a wavelength of 511 nm. The microresonator has a quality factor of 3200 while the threshold excitation power density for the onset of lasing is 22 kW/cm(2) at room temperature. Micropillars of different diameter fabricated out of this structure show discrete optical modes due to the three dimensional optical confinement of the optical wave. (c) 2005 WILEY-VCH Verlag GmbH I Co. KGaA, Weinheim.

AB - In this paper we report on recent results concerning conventional edge emitting laser structures containing either quantum wells or quantum dots as region and vertical-cavity surface-emitting lasers. In the first part a series of four similar laser structures containing quantum wells with an emission wavelength of 520 run was grown by molecular beam epitaxy in order to perform a systematic study of lifetime improvement. They differed in the alternating implementation of an additional 5 nm thick ZnSSe layer with a high sulfur composition of 25% neighboring the quantum well. A high stability of the CdZnSSe active layer was observed by introducing such a kind of strain compensating layers. Lifetime measurements showed a significant improvement up to one order of magnitude using p- and n- I p-side layers. In the second part electro-optical characteristics of ridge and planar CdSe quantum dot laser diodes were compared. A reduction of the threshold current density by a factor of 4.7 for the ridge structure was obtained. This has to be associated to the reduction of current spreading inside the laser diodes. Furthermore, a significant slower degradation of CdSe quantum dot structures compared to common ZnSe-based QW structures was observed. An operating time over 2700 h in pulsed mode experiments at 50 A/cm(2) in LED mode was achieved. In the third part we report on the realization of an optically pumped monolithic vertical-cavity surface-emitting laser operating at a wavelength of 511 nm. The microresonator has a quality factor of 3200 while the threshold excitation power density for the onset of lasing is 22 kW/cm(2) at room temperature. Micropillars of different diameter fabricated out of this structure show discrete optical modes due to the three dimensional optical confinement of the optical wave. (c) 2005 WILEY-VCH Verlag GmbH I Co. KGaA, Weinheim.

U2 - 10.1002/pssc.200460673

DO - 10.1002/pssc.200460673

M3 - Chapter

VL - 2

T3 - Physica Status Solidi C-Current Topics in Solid State Physics

SP - 1098

EP - 1105

BT - E-MRS 2004 Fall Meeting Symposia C and F

A2 - Stutzmann, M.

ER -